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| Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 !Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. !External dimensions (Units : mm) 2SB1184 1.50.3 2SB1243 C0.5 2.3 +0.2 -0.1 0.50.1 4.40.2 0.9 6.50.2 5.1 +0.2 -0.1 6.80.2 2.50.2 5.5 +0.3 -0.1 9.50.5 0.9 1.5 2.5 0.75 0.9 0.650.1 0.65Max. 1.0 0.550.1 0.50.1 (1) (2) (3) !Structure Epitaxial planar type PNP silicon transistor 2.30.2 2.30.2 1.00.2 2.54 2.54 (1) (2) (3) 1.05 14.50.5 0.450.1 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : ATV (1) Emitter (2) Collector (3) Base !Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC Limits -60 -50 -5 -3 -4.5 1 15 1 Tj Tstg 150 -55~+150 Unit V V V A (DC) A (Pulse) W W (TC=25C) W C C 2 1 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SB1184 dissipation 2SB1243 Junction temperature Storage temperature ICP PC 1 Single pulse, Pw=100ms 2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. 1/3 For the very latest product data and news visit angliac.com Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. -60 -50 -5 - - - - 82 - - Typ. - - - - - - - - 70 50 Max. - - - -1 -1 -1 -1.2 390 - - Unit V V V A A V V - MHz pF IC=-50A IC=-1mA IE=-50A VCB=-40V VEB=-4V Conditions IC/IB=-2A/-0.2A IC/IB=-1.5A/-0.15A VCE=-3V, IC=-0.5A VCE=-5V, IE=0.5A, f=30MHz VCB=-10V, IE=0A, f=1MHz !Packaging specifications and hFE Package Code Type 2SB1184 2SB1243 hFE PQR PQR - Basic ordering unit (pieces) TL 2500 Taping TV2 2500 - hFE values are classified as follows : Item hFE P 82~180 Q 120~270 R 180~390 !Electrical characteristic curves -10 COLLECTOR CURRENT : IC (A) -3.0 VCE=-3V COLLECTOR CURRENT : IC (A) -2.5 -2.0 -1.5 -1.0 COLLECTOR CURRENT : IC (A) -5 -2 -1 -0.5 -0.2 -0.1 Ta=100C 25C -25C -50mA -45mA -40mA -35mA -30mA -25mA Tc=25C -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 IB=-5mA -50mA -45mA -40mA -35mA -30mA -25mA -20mA -15mA -10mA Tc=25C -20mA -15mA -10mA -0.05 -0.02 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 BASE TO EMITTER VOLTAGE : VBE (V) -5mA -0.5 0 0 PC=15W -1 -2 -3 IB=0mA -4 -5 -10 -20 IB=0mA -30 -40 -50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter output characteristics ( ) 2/3 For the very latest product data and news visit angliac.com Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors 1000 500 Ta=25C 1k 500 Ta=100C 25C -25C VCE=-3V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -10 -5 -2 -1 -0.5 -0.2 -0.1 IC/IB=50/1 20/1 10/1 Ta=25C DC CURRENT GAIN : hFE 200 100 50 DC CURRENT GAIN : hFE VCE=-5V 200 100 50 20 10 5 2 -3V 20 10 5 2 1 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -0.05 -0.02 1 -0.01 -0.02 -0.05 -0.1-0.2 -0.5 -1 -2 -5 -10 -0.01 -0.01 -0.02 -0.05-0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs.collector current 1000 TRANSITION FREQUENCY : fT (MHz) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 lC/lB=10 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25C VCE=-5V 1000 500 200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 Ta=-25C 25C 100C Ta=25C f=1MHz IE=0A VBE(sat) Ta=100C 25C -25C VCE(sat) -5 -10 50 100 200 500 1000 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector base voltage -10.0 -5.0 COLLECTOR CURRENT : IC (A) -10.0 -5.0 COLLECTOR CURRENT : IC (A) IC Max. (Pulse) -2.0 -1.0 -0.5 -0.2 -0.1 -2.0 -1.0 -0.5 DC Tc=25C Single nonrepetitive pulse 0 =1 Pw D C 10 0m s =10 PW 10 m s s 0m ms -0.2 -0.1 -0.05 Tc=25C Single -0.02 nonrepetitive pulse -0.01 -0.1 -0.2 -0.5 -1 -0.05 -0.02 -0.01 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50-100 -2 -5 -10 -20 -50-100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operation area (2SB1184) Fig.11 Safe operation area (2SB1243) 3/3 For the very latest product data and news visit angliac.com |
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